SEMIX403GB128DS Modulo IGBT Insulated Gate Bipolar Transistor, 420A I(C), 1200V, V(BR)CES, N-Channel, CASE SEMIX 3S, 18 PIN

SEMIX403GB128DS Modulo IGBT Insulated Gate Bipolar Transistor, 420A I(C), 1200V, V(BR)CES, N-Channel, CASE SEMIX 3S, 18 PIN
  • FABRICANTE: SEMIKRON
  • PART# Model:SEMIX403GB128DS
  • STOCK:3
  • COTIZAR: SEMIX403GB128DS
  • PRECIO:-
DESCRIPCIÓN

Modulo IGBT Insulated Gate Bipolar Transistor, 420A I(C), 1200V, V(BR)CES, N-Channel, CASE SEMIX 3S, 18 PIN

FICHA TECNICA

Data Sheet SEMIX403GB128DS


Produstos Relacionados

SKKT92B16E MODULO SEMIPAK THYRISTOR & THYRISTOR 95A 1600V
SKKT92B16E MODULO SEMIPAK THYRISTOR & THYRISTOR 95A 1600V
Ver
BSM50GD120DN2 MODULO IGBT 50A 1200V SIX-PACK W/LONG PINS
BSM50GD120DN2 MODULO IGBT 50A 1200V SIX-PACK W/LONG PINS
Ver
BSM15GD120DN IGBT Modules 1200V 15A 3-PHASE
BSM15GD120DN IGBT Modules 1200V 15A 3-PHASE
Ver
BSM75GD120DN Modulo IGBT Power Module
BSM75GD120DN Modulo IGBT Power Module
Ver
Telefono