BSM50GB120DN2 MODULO IGBT DUAL, 1200V

  • FABRICANTE: Eupec Power Semiconductors
  • PART# Model:BSM50GB120DN2
  • STOCK:7
  • COTIZAR: BSM50GB120DN2
  • PRECIO:-
BSM50GB120DN2 MODULO IGBT DUAL, 1200V

DESCRIPCIÓN

MODULO IGBT  DUAL, 1200V

  • IGBT MODULE, DUAL, 1200V
  • DC Collector Current: 78A
  • Collector Emitter Voltage Vces: 3V
  • Power Dissipation Pd: 400W
  • Collector Emitter Voltage V(br)ceo: 1.2kV
  • Operating Temperature Range: -40°C to +125°C
  • Transistor Case Style: Module
  • No. of Pins: 7
  • Alternate Case Style: M34a
  • Current Ic Continuous a Max: 50A
  • Current Temperature: 80°C
  • Fall Time tf: 100ns
  • Module Configuration: Dual
  • Package / Case: Half Bridge 1
  • Power Dissipation Max: 400W
  • Pulsed Current Icm: 100A
  • Rise Time: 100ns
  • Termination Type: Screw
  • Voltage Vces: 1.2kV

 

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